This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results