This powerful driver can source up to 2.5A with a 1.2 Ohm pull-down impedance for driving the top MOSFET and source 3A with a 0.55 Ohm pull-down impedance for the bottom MOSFET, making it ideal for ...

State-of-the-art MOSFET handles higher peak currents delivering a cost-effective, high-performance and enhanced reliability hot swap solution The AOLV66935 utilizes AOS’ 100V AlphaSGT™ proprietary ...

Designed for highly efficient, low- R DS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with ...

Robert L. Chao, founder, President and CEO of Advanced Linear Devices, Inc (ALD), is a talented innovator. Chao’s latest improvement in zero-threshold precision MOSFET technology will enable designers ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...

MOSFET startup Inergy Technology has recently developed new BLDC electric motor drivers for cloud server and data center cooling systems. Trial production with major server customers in Japan and ...

SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications.

onsemi and FORVIA HELLA signed a new long-term agreement to adopt onsemi’s PowerTrench® T10 MOSFET technology across advanced automotive platforms. T10 power MOSFETs, manufactured at onsemi’s state-of ...

Emerging as the first asymmetric dual TrenchFET power MOSFET in a PowerPAIR 6 mm x 3.7 mm package using TrenchFET Gen III technology, the SiZ710DT combines a low- and high-side MOSFET in one compact ...

State-of-the-art MOSFET handles higher peak currents delivering a cost-effective, high-performance and enhanced reliability hot swap solution State-of-the-art MOSFET handles higher peak currents ...