BIEL, Switzerland--(BUSINESS WIRE)--IGBT gate driver manufacturer CT-Concept Technologie GmbH, a Power Integrations company, has announced the availability of its 1SC0450V single driver core for IGBT ...

Isolated IGBT gate driver requires isolated power supply for safety isolation and level shifting. Unfortunately design of isolated power supply based on standard power control IC is not trivial.

TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Two 35-V single-channel gate drivers from Texas Instruments, the UCC27531 and UCC27532, drive IGBT (insulated-gate bipolar transistor) and SiC (silicon carbide) FET power switches with 2.5-A source ...

ST’s STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture. ST ...

The VLA502-01 is a hybrid integrated circuit (Figure 1) intended as a gate driver for high power IGBT modules. This circuit has been optimized for use with Powerex NFH-Series IGBT modules. However, ...

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

Littelfuse launched IX4352NE, a Low-side SiC MOSFET and IGBT Gate Driver IC specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9 ...

Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V. With enhanced protection features to ...