Business Wire

GaN-on-Sapphire HEMT Power IC by Power Integrations Report 2019: Estimation of the Production Costs of the ICs, the HEMT and the Package - ResearchAndMarkets.com

DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
Yahoo Finance

DB HiTek Begins Customer Enablement for 650V GaN HEMT Process

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
EDN

Breakthrough output achieved with Gallium Nitride HEMT amplifier

Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...
Business Wire

GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison - Research and Markets

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...
Electronic Design

GaN-Based HEMTs Fabricated On 4-in. Silicon Wafers

To harness the high-frequency benefits of gallium nitride (GaN), Nitronex Corp. of Raleigh, N.C., has developed proprietary processing technology for fabricating GaN ...
EDN

Advances in high power GaN HEMT transistors

Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
Dataquest

DB HiTek begins customer enablement for 650V GaN HEMT process

DB HiTek, a leading 8-inch specialty foundry, announced that it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process, a ...